TEMPERATURE-DEPENDENCE OF CHARGE-TRANSFER IN METAL-NITRIDE-SEMICONDUCTOR DIODE STRUCTURE

被引：5

作者：

NISHIHARA, M

FUJITA, S

SASAKI, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 10期

关键词：

D O I：

10.1143/JJAP.20.1975

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1975 / 1976

页数：2

共 10 条

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[9] TRAP-ASSISTED CHARGE INJECTION IN MNOS STRUCTURES [J].

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[10] DISCHARGING PROCESS BY MULTIPLE TUNNELINGS IN MNOS STRUCTURES [J].

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