DISCHARGING PROCESS BY MULTIPLE TUNNELINGS IN MNOS STRUCTURES

被引：7

作者：

YAMAMOTO, H ^{[1
]}

IWASAWA, H ^{[1
]}

SASAKI, A ^{[1
]}

机构：

[1] KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN

来源：

ELECTRON DEVICE LETTERS | 1981年 / 2卷 / 02期

关键词：

D O I：

10.1109/EDL.1981.25325

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：21 / 23

页数：3

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[8] TUNNELLING THEORIES OF NONVOLATILE SEMICONDUCTOR MEMORIES [J].

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[9] HIGH-FIELD CONDUCTIVITY OF AMORPHOUS INSULATOR FILMS [J].

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[10]

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