CHARGE-TRANSFER BY DIRECT TUNNELING IN THIN-OXIDE MEMORY TRANSISTORS

被引：30

作者：

FERRISPRABHU, AV ^{[1
]}

机构：

[1] IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452

来源：

关键词：

D O I：

10.1109/T-ED.1977.18772

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：524 / 530

页数：7

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[5] THEORY OF MNOS MEMORY DEVICE BEHAVIOR [J].

FERRISPRABHU, AV .

FERRISPRABHU, AV ;

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MEDVE, TJ .

[7] MAXIMUM TUNNELLING DISTANCE IN MNOS DEVICES - THEORY [J].

FERRISPRABHU, AV .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 11 (01) :81-+

[8] TIME-DEPENDENCE OF CHARGE TRANSPORT IN MIS MEMORY TRANSISTORS [J].

FERRISPRABHU, AV .

[9] TUNNELLING THEORIES OF NONVOLATILE SEMICONDUCTOR MEMORIES [J].

FERRISPRABHU, AV .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 35 (01) :243-250

[10]

FERRISPRABHU AV, 1973, IEEE INT ELECTRON DE, P75