EVALUATION OF AN INTEGRAL IN THEORY OF NONVOLATILE SEMICONDUCTOR MEMORIES

被引：1

作者：

FERRISPRABHU, AV

LUBART, ND

MEDVE, TJ

机构：

[1] IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452

[2] IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452

[3] IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 01期

关键词：

D O I：

10.1016/0038-1101(77)90037-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：74 / 75

页数：2

共 13 条

[1]

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[2]

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[3]

Erdelyi A, 1953, HIGH TRANSCENDENTAL, V1, P27

[4]

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IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1973, 17 (02) :125-134

[6]

FERRISPRABHU AV, 1974, B AM PHYS SOC, V19, P484

[7] MAXIMUM TUNNELLING DISTANCE IN MNOS DEVICES - THEORY [J].

FERRISPRABHU, AV .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 11 (01) :81-+

[8] METAL-NITRIDE-OXIDE-SILICON(MNOS) TRANSISTOR - CHARACTERISTICS AND APPLICATIONS [J].

FROHMANB.D .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08) :1207-+

[9]

GRADSHTEYN IS, 1965, TABLES INTEGRALS SER, P205

[10] DISCHARGE OF MNOS STRUCTURES [J].

LUNDKVIST, L ;

LUNDSTROM, I ;

SVENSSON, C .

SOLID-STATE ELECTRONICS, 1973, 16 (07) :811-+

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