TUNNELLING THEORIES OF NONVOLATILE SEMICONDUCTOR MEMORIES

被引：6

作者：

FERRISPRABHU, AV ^{[1
]}

机构：

[1] IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 35卷 / 01期

关键词：

D O I：

10.1002/pssa.2210350126

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：243 / 250

页数：8

共 19 条

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BROWN, MACS ;

BOUNDEN, JE ;

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[2]

CARLSTEDT G, 1972, J SOLID STATE CIRCUI, V7, P382

[3]

Dorda G., 1970, Physica Status Solidi A, V1, P71, DOI 10.1002/pssa.19700010109

[4] THEORY OF MNOS MEMORY DEVICE BEHAVIOR [J].

FERRISPRABHU, AV .

[5]

FERRISPRABHU AV, 1974, B AM PHYS SOC, V19, P484

[6] MAXIMUM TUNNELLING DISTANCE IN MNOS DEVICES - THEORY [J].

FERRISPRABHU, AV .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 11 (01) :81-+

[7]

FERRISPRABHU AV, 1973, IEEE INT ELECTRONIC, P484

[8]

FERRISPRABHU AV, 1973, SOLID STATE ELECTRON, V16, P1081

FROHMANB.D .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08) :1207-+

FROHMANB.D ;

LENZLINGER, M .