ON THE QUALITY OF CONTACTS IN A-SI-H STAGGERED ELECTRODE THIN-FILM TRANSISTORS

[1] AMORPHOUS-SILICON FET WITH SCHOTTKY CONTACTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1257 - 1258

[2] 6X6 INCH 20 LINES-PER-INCH LIQUID-CRYSTAL DISPLAY PANEL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (11) : 995 - 1001

[3] DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 451 - 454

[4] ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01): : 149 - 165

[5] HERD SR, 1972, J NONCRYSTAL SOLIDS, V7, P309, DOI DOI 10.1016/0022-3093(72)90267-0

[6] THE EFFECTS OF ION-IMPLANTATION ON THE ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (04): : 439 - 456

[7] THE CHARACTERISTICS AND PROPERTIES OF OPTIMIZED AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (02): : 87 - 92

[8] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) : 239 - 257

[9] AMORPHOUS-SILICON INTEGRATED-CIRCUIT [J]. PROCEEDINGS OF THE IEEE, 1980, 68 (10) : 1349 - 1350

[10] AMORPHOUS-SILICON IMAGE SENSOR IC [J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 182 - 184

[1] AMORPHOUS-SILICON FET WITH SCHOTTKY CONTACTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1257 - 1258

[2] 6X6 INCH 20 LINES-PER-INCH LIQUID-CRYSTAL DISPLAY PANEL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (11) : 995 - 1001

[3] DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 451 - 454

[4] ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01): : 149 - 165

[5] HERD SR, 1972, J NONCRYSTAL SOLIDS, V7, P309, DOI DOI 10.1016/0022-3093(72)90267-0

[6] THE EFFECTS OF ION-IMPLANTATION ON THE ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (04): : 439 - 456

[7] THE CHARACTERISTICS AND PROPERTIES OF OPTIMIZED AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (02): : 87 - 92

[8] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) : 239 - 257

[9] AMORPHOUS-SILICON INTEGRATED-CIRCUIT [J]. PROCEEDINGS OF THE IEEE, 1980, 68 (10) : 1349 - 1350

[10] AMORPHOUS-SILICON IMAGE SENSOR IC [J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 182 - 184