THE EFFECTS OF ION-IMPLANTATION ON THE ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712

[2] LITHIUM DOPING OF AMORPHOUS SILICON [J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (02) : 127 - 137

[3] INTERSTITIAL DOPING OF AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 850 - 852

[4] HOFFMANN HJ, 1979, APPL PHYS, V18

[5] Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5

[6] MADAN A, 1977, 7TH P INT C AM LIQ S, P377

[7] MATSUMURA H, 1978, INT C ION BEAM MODIF

[8] MULLER G, 1977, 7TH P INT C AM LIQ S, P442

[9] Spear W. E., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P1

[10] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (09) : 1193 - 1196

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712

[2] LITHIUM DOPING OF AMORPHOUS SILICON [J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (02) : 127 - 137

[3] INTERSTITIAL DOPING OF AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 850 - 852

[4] HOFFMANN HJ, 1979, APPL PHYS, V18

[5] Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5

[6] MADAN A, 1977, 7TH P INT C AM LIQ S, P377

[7] MATSUMURA H, 1978, INT C ION BEAM MODIF

[8] MULLER G, 1977, 7TH P INT C AM LIQ S, P442

[9] Spear W. E., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P1

[10] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (09) : 1193 - 1196