LITHIUM DOPING OF AMORPHOUS SILICON

Interstitial doping of glow discharge a-Si with lithium leads to conductivity values comparable to phosphorus doping and offers the advantage that it is applied after the preparation of the films. Results of thermopower and conductivity measurements of an amorphous silicon film doped stepwise by Li implantation are presented. Analysis of the data indicates that the electronic transport is governed by a considerable nonlinear statistical shift of the Fermi level and an activated carrier mobility. From the position of EF at zero temperature, determined by extrapolation, the density of localized states is inferred. Good agreement is found with published results from field effect measurements. © 1979 AIME.