SYNTHETIC DIAMOND ELECTRODES - PHOTOELECTROCHEMICAL INVESTIGATION OF UNDOPED AND BORON-DOPED POLYCRYSTALLINE THIN-FILMS

被引:64
作者
SAKHAROVA, AY
PLESKOV, YV
DIQUARTO, F
PIAZZA, S
SUNSERI, C
TEREMETSKAYA, IG
VARNIN, VP
机构
[1] UNIV PALERMO,DIPARTIMENTO INGN CHIM PROC & MAT,I-90128 PALERMO,ITALY
[2] RUSSIAN ACAD SCI,INST PHYS CHEM,MOSCOW 117071,RUSSIA
关键词
D O I
10.1149/1.2050078
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The photoelectrochemical behavior of polycrystalline diamond films, grown on tungsten substrates by chemical vapor deposition (CVD), has been studied in 0.5M H2SO4 solution. Different types of films have been investigated, with or without intentional doping with boron. Experimental results point to a p-type behavior of boron-doped samples, while the presence of an inversion of the photocurrent sign reveals an insulating behavior of undoped samples. Photocurrent spectra display different threshold energies, which have been related with possible defect levels inside both types of diamond films.
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页码:2704 / 2709
页数:6
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