PHYSICAL AND CHEMICAL ETCHING IN PLASMAS

被引：10

作者：

CURRAN, JE

机构：

来源：

关键词：

D O I：

10.1016/0040-6090(81)90280-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：101 / 116

页数：16

共 59 条

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[3]

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[4]

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BUTLER, HS ;

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[6]

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[7] THE IMPLICATION OF FLOW-RATE DEPENDENCIES IN PLASMA-ETCHING [J].

CHAPMAN, BN ;

HANSEN, TA ;

MINKIEWICZ, VJ .

[8] FLOW-RATE EFFECTS IN PLASMA ETCHING [J].

CHAPMAN, BN ;

MINKIEWICZ, VJ .

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[9]

CHAPMAN BN, 1979, APPL PHYS LETT, V34, P192

[10]

CHAPMAN S, 1970, MATH THEORY NON UNIF