SOLID-STATE BULK PHENOMENA AND THEIR APPLICATION TO INTEGRATED ELECTRONICS

被引：7

作者：

ENGELBRE.RS

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1968年 / SC 3卷 / 03期

关键词：

D O I：

10.1109/JSSC.1968.1049884

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：210 / &

共 11 条

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HAYASHI, T ;

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[2]

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[5] HIGH FIELD DOMAINS IN CADMIUM SULFIDE [J].

HAYDL, WH ;

QUATE, CF .

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[6] HEAT FLOW IN N++-N-N+ EPITAXIAL GAAS BULK EFFECT DEVICES [J].

KNIGHT, S .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (01) :112-&

[7] DYNAMICS OF HIGH-FIELD PROPAGATING DOMAINS IN BULK SEMICONDUCTORS [J].

KUROKAWA, K .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (10) :2235-+

[8] SPECIFIC NEGATIVE RESISTANCE IN SOLIDS [J].

RIDLEY, BK .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (530) :954-&

[9]

SANDBANK CP, 1967 ISSCC DIG TECH, P96

[10] FUNCTIONAL BULK SEMICONDUCTOR OSCILLATORS [J].

SHOJI, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) :535-+

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