FUNCTIONAL BULK SEMICONDUCTOR OSCILLATORS

被引：52

作者：

SHOJI, M

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1967.16001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：535 / +

页数：1

共 10 条

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[2] STABLE SPACE-CHARGE LAYERS IN 2-VALLEY SEMICONDUCTORS
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[3] Gunn J.B., 1964, PLASMA EFFECTS SOLID, P199
[4] NONLINEAR SPACE-CHARGE DOMAIN DYNAMICS IN A SEMICONDUCTOR WITH NEGATIVE DIFFERENTIAL MOBILITY
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[5] THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 4 - +
[6] SANDBANK CP, 1967, 1967 INT SOL STAT CI, V10, P96
[7] BULK SEMICONDUCTOR HIGH-SPEED CURRENT WAVEFORM GENERATOR
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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (05): : 720 - &
[8] CONTROLLED BULK SEMICONDUCTOR CURRENT PULSE GENERATOR
SHOJI, M
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (05): : 710 - &
[9] A VOLTAGE TUNABLE GUNN-EFFECT OSCILLATOR
SHOJI, M
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (01): : 130 - +
[10] Thim H.W., 1966, Elect. Lett, V2, P403