TUNNELING SPECTROSCOPY OF THE SI(111)2X1 SURFACE

[1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[2] THEORY OF SCANNING TUNNELING MICROSCOPY METHODS AND APPROXIMATIONS [J]. PHYSICA B & C, 1984, 127 (1-3): : 143 - 150

[3] ELECTRON INTERFEROMETRY AT CRYSTAL-SURFACES [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (09) : 987 - 990

[4] REAL-SPACE OBSERVATION OF SURFACE-STATES ON SI(111)7X7 WITH THE TUNNELING MICROSCOPE [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (19) : 2032 - 2034

[5] SCANNING TUNNELING MICROSCOPY [J]. SURFACE SCIENCE, 1985, 152 (APR) : 17 - 26

[6] BINNIG G, 1986, IBM J RES DEV, V30, P355

[7] TUNNELING SPECTROSCOPY AND INVERSE PHOTOEMISSION - IMAGE AND FIELD STATES [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (09) : 991 - 994

[8] BINNIG G, 1982, HELV PHYS ACTA, V55, P726

[9] DIFFERENTIAL REFLECTIVITY OF SI(111)2X1 SURFACE WITH POLARIZED-LIGHT - A TEST FOR SURFACE-STRUCTURE [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (13) : 1145 - 1147

[10] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10): : 3398 - +

[1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[2] THEORY OF SCANNING TUNNELING MICROSCOPY METHODS AND APPROXIMATIONS [J]. PHYSICA B & C, 1984, 127 (1-3): : 143 - 150

[3] ELECTRON INTERFEROMETRY AT CRYSTAL-SURFACES [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (09) : 987 - 990

[4] REAL-SPACE OBSERVATION OF SURFACE-STATES ON SI(111)7X7 WITH THE TUNNELING MICROSCOPE [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (19) : 2032 - 2034

[5] SCANNING TUNNELING MICROSCOPY [J]. SURFACE SCIENCE, 1985, 152 (APR) : 17 - 26

[6] BINNIG G, 1986, IBM J RES DEV, V30, P355

[7] TUNNELING SPECTROSCOPY AND INVERSE PHOTOEMISSION - IMAGE AND FIELD STATES [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (09) : 991 - 994

[8] BINNIG G, 1982, HELV PHYS ACTA, V55, P726

[9] DIFFERENTIAL REFLECTIVITY OF SI(111)2X1 SURFACE WITH POLARIZED-LIGHT - A TEST FOR SURFACE-STRUCTURE [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (13) : 1145 - 1147

[10] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10): : 3398 - +