THE ADIABATIC HALL EFFECT IN SEMICONDUCTORS

被引：12

作者：

JOHNSON, VA

SHIPLEY, FM

机构：

来源：

PHYSICAL REVIEW | 1953年 / 90卷 / 04期

关键词：

D O I：

10.1103/PhysRev.90.523

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：523 / 529

页数：7

共 24 条

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[3]

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[5]

Gans R, 1906, ANN PHYS-BERLIN, V20, P293

[6]

GOFF JE, COMMUNICATION

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[8]

Hall E., 1879, AM J MATH, V2, P287, DOI [10.2307/2369245, DOI 10.2307/2369245]

[9] THE RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J].

HUNG, CS ;

GLIESSMAN, JR .

PHYSICAL REVIEW, 1950, 79 (04) :726-727

[10] THE COMBINATION OF RESISTIVITIES IN SEMICONDUCTORS [J].

JOHNSON, VA ;

LARKHOROVITZ, K .

PHYSICAL REVIEW, 1951, 82 (06) :977-978

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