BAND-OFFSETS AND EFFECTIVE-MASS PARAMETERS IN QUANTUM WELLS

被引：23

作者：

ROSSLER, U

机构：

[1] Univ Regensburg, Regensburg, West Ger, Univ Regensburg, Regensburg, West Ger

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 65卷 / 11期

关键词：

SEMICONDUCTING ALUMINUM COMPOUNDS - SEMICONDUCTING GALLIUM ARSENIDE;

D O I：

10.1016/0038-1098(88)90076-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The 85% rule for the conduction band-offset of GaAs quantum wells with AlGaAs barriers established by R. Dingle et al. turns out to be an artifact of using inappropriate hole mass parameters. It is shown that band parameters (for hole masses and conduction band nonparabolicity) obtained from adhering to quantum well optical data are consistent with known values for the bulk material.

引用

页码：1279 / 1280

页数：2

共 19 条

[1] INTER-VALENCE-BAND TRANSITIONS IN UNIAXIALLY STRESSED GE AND GAAS [J].