DO WE UNDERSTAND HETEROJUNCTION BAND DISCONTINUITIES

被引：38

作者：

MARGARITONDO, G ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,MADISON,WI 53706

来源：

SURFACE SCIENCE | 1986年 / 168卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90874-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：439 / 453

页数：15

共 71 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[2]

[Anonymous], COMMUNICATION

[3] ENERGY BAND-GAP DISCONTINUITIES IN GAAS-(AL,GA)AS HETEROJUNCTIONS [J].

BATEY, J ;

WRIGHT, SL ;

DIMARIA, DJ .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :484-487

[4] SURFACE PROCESSES CONTROLLING MBE HETEROJUNCTION FORMATION - GAAS(100)/GE INTERFACES [J].

BAUER, RS ;

MIKKELSEN, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :491-497

[5] GE-GAAS(110) INTERFACE FORMATION [J].

BAUER, RS ;

MCMENAMIN, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1444-1449

[6] THE EFFECT OF MANY-ELECTRON CORRELATION ON PHOTOTHRESHOLDS OF SEMICONDUCTORS AND VALENCE BAND DISCONTINUITIES AT HETEROJUNCTIONS [J].

BECHSTEDT, F ;

ENDERLEIN, R ;

HEINRICH, O .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1984, 126 (02) :575-585

[7] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[8] A UNIVERSAL TREND IN THE BINDING-ENERGIES OF DEEP IMPURITIES IN SEMICONDUCTORS [J].

CALDAS, MJ ;

FAZZIO, A ;

ZUNGER, A .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :671-673

[9] DOPING INTERFACE DIPOLES - TUNABLE HETEROJUNCTION BARRIER HEIGHTS AND BAND-EDGE DISCONTINUITIES BY MOLECULAR-BEAM EPITAXY [J].

CAPASSO, F ;

CHO, AY ;

MOHAMMED, K ;

FOY, PW .

APPLIED PHYSICS LETTERS, 1985, 46 (07) :664-666

[10] INVERSION-LAYERS AT PBTE INTERFACES [J].

CERRINA, F ;

DANIELS, RR ;

FANO, V .

APPLIED PHYSICS LETTERS, 1983, 43 (02) :182-184

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