CHARACTERIZATION OF PHOSPHORUS PILE-UP AT THE SIO2/SI INTERFACE

被引：40

作者：

SATO, Y ^{[1
]}

WATANABE, M ^{[1
]}

IMAI, K ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, ELECTR TECHNOL, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 09期

关键词：

D O I：

10.1149/1.2220885

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Phosphorus pile-up at the SiO2/Si interface and how its location affects n-well doping concentration are described. The pile-up is first shown to be situated on the SiO2 side of the SiO2/Si interface, and then the amount of phosphorus involved is determined quantitatively. Doping concentration decreases during n-well processes, and the decrease is due to removal of the pile-up layer with removal of SiO2.

引用

页码：2679 / 2682

页数：4

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