ACTIVATION AND GETTERING OF INTRINSIC METALLIC IMPURITIES DURING RAPID THERMAL-PROCESSING

被引：3

作者：

HARTITI, B

EICHHAMMER, W

MULLER, JC

SIFFERT, P

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(89)90228-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：129 / 132

页数：4

共 15 条

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[9]

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[10] ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS [J].

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