PROCESS-INDUCED AND GOLD ACCEPTOR DEFECTS IN SILICON

被引：31

作者：

MESLI, A

COURCELLE, E

ZUNDEL, T

SIFFERT, P

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.36.8049

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8049 / 8062

页数：14

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