PROCESS-INDUCED AND GOLD ACCEPTOR DEFECTS IN SILICON

被引:31
作者
MESLI, A
COURCELLE, E
ZUNDEL, T
SIFFERT, P
机构
来源
PHYSICAL REVIEW B | 1987年 / 36卷 / 15期
关键词
D O I
10.1103/PhysRevB.36.8049
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:8049 / 8062
页数:14
相关论文
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