DEEP LEVEL STUDY BY ANALYSIS OF THERMAL AND OPTICAL TRANSIENTS IN SEMICONDUCTOR JUNCTIONS

被引：16

作者：

VINCENT, G ^{[1
]}

机构：

[1] INST NATL SCI APPL LYON,CNRS,EQUIPE RECH,PHYS MAT LAB,F-69621 VILLEURBANNE,FRANCE

来源：

APPLIED PHYSICS | 1980年 / 23卷 / 02期

关键词：

D O I：

10.1007/BF00899721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：215 / 221

页数：7

共 18 条

[1]

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[4]

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BHATTACHARYA, PK .

APPLIED PHYSICS LETTERS, 1978, 33 (03) :259-261

[7] CAPACITANCE TRANSIENT SPECTROSCOPY [J].

MILLER, GL ;

LANG, DV ;

KIMERLING, LC .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :377-448

[8] STUDY OF MAIN ELECTRON TRAP IN GA1-XINXAS ALLOYS [J].

MIRCEA, A ;

MITONNEAU, A ;

HALLAIS, J .

PHYSICAL REVIEW B, 1977, 16 (08) :3665-3675

[9] STUDY OF ELECTRON TRAPS IN VAPOR-PHASE EPITAXIAL GAAS [J].

MIRCEA, A ;

MITONNEAU, A .

APPLIED PHYSICS, 1975, 8 (01) :15-21

[10]

MIRCEA A, 1977, J PHYS LETT L, V41, P38

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