CAPTURE CROSS-SECTIONS OF THE GOLD DONOR AND ACCEPTOR STATES IN N-TYPE CZOCHRALSKI SILICON

被引：62

作者：

WU, RH ^{[1
]}

PEAKER, AR ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,SOLID STATE ELECTR GRP,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 07期

关键词：

D O I：

10.1016/0038-1101(82)90066-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：643 / 649

页数：7

相关论文

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