THERMAL ACTIVATION-ENERGY OF GOLD-ACCEPTOR LEVEL IN SILICON

被引：63

作者：

ENGSTROM, O ^{[1
]}

GRIMMEISS, HG ^{[1
]}

机构：

[1] INST TECHNOL,DEPT SOLID STATE PHYS,LUND,SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 02期

关键词：

D O I：

10.1063/1.321653

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：831 / 837

页数：7

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