ELECTRON AND HOLE CAPTURE AT AU AND PT CENTERS IN SILICON

被引：68

作者：

BROTHERTON, SD

LOWTHER, JE

机构：

来源：

PHYSICAL REVIEW LETTERS | 1980年 / 44卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.44.606

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：606 / 609

页数：4

共 15 条

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[6]

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[8] PROPERTIES OF AU, PT, PD AND RH LEVELS IN SILICON MEASURED WITH A CONSTANT CAPACITANCE TECHNIQUE [J].

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[10]

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