学术探索
学术期刊
新闻热点
数据分析
智能评审

ELECTRON AND HOLE CAPTURE AT AU AND PT CENTERS IN SILICON

被引：68
作者：
BROTHERTON, SD
LOWTHER, JE
机构：
来源：
PHYSICAL REVIEW LETTERS | 1980年 / 44卷 / 09期
关键词：
D O I：
10.1103/PhysRevLett.44.606
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：606 / 609
页数：4
相关论文
共 15 条
[11]  
Swalin R., 1962, THERMODYNAMICS SOLID, P49
[12]   ENTROPY OF IONIZATION AND TEMPERATURE-VARIATION OF IONIZATION LEVELS OF DEFECTS IN SEMICONDUCTORS [J].
VANVECHTEN, JA ;
THURMOND, CD .
PHYSICAL REVIEW B, 1976, 14 (08) :3539-3550
[13]   COMPARISON OF THEORY WITH QUENCHING EXPERIMENTS FOR ENTROPY AND ENTHALPY OF VACANCY FORMATION IN SI AND GE [J].
VANVECHTEN, JA ;
THURMOND, CD .
PHYSICAL REVIEW B, 1976, 14 (08) :3551-3557
[14]   DEFECTS IN IRRADIATED SILICON .1. ELECTRON SPIN RESONANCE OF SI-A CENTER [J].
WATKINS, GD ;
CORBETT, JW .
PHYSICAL REVIEW, 1961, 121 (04) :1001-&
[15]   SPIN RESONANCE OF PD AND PT IN SILICON [J].
WOODBURY, HH ;
LUDWIG, GW .
PHYSICAL REVIEW, 1962, 126 (02) :466-&
12