COMPARISON OF THEORY WITH QUENCHING EXPERIMENTS FOR ENTROPY AND ENTHALPY OF VACANCY FORMATION IN SI AND GE

被引:75
作者
VANVECHTEN, JA [1 ]
THURMOND, CD [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源
PHYSICAL REVIEW B | 1976年 / 14卷 / 08期
关键词
D O I
10.1103/PhysRevB.14.3551
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3551 / 3557
页数:7
相关论文
共 33 条
[1]   EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J].
BARBER, HD .
SOLID-STATE ELECTRONICS, 1967, 10 (11) :1039-&
[2]  
CODERRE WW, 1971, PHYSICS SEMIMETALS N, P531
[3]  
CODERRE WW, 1971, J PHYS CHEM SOLIDS S, V32, P531
[4]   ELECTRON-PHONON SELF-ENERGIES IN MANY-VALLEY SEMICONDUCTORS [J].
COHEN, ML .
PHYSICAL REVIEW, 1962, 128 (01) :131-&
[5]   QUENCHED-IN LEVELS IN P-TYPE SILICON [J].
ELSTNER, L ;
KAMPRATH, W .
PHYSICA STATUS SOLIDI, 1967, 22 (02) :541-&
[6]   TEMPERATURE DEPENDENCE OF THE ENERGY GAP IN SEMICONDUCTORS [J].
FAN, HY .
PHYSICAL REVIEW, 1951, 82 (06) :900-905
[7]   LATTICE-DYNAMICS OF TETRAHEDRALLY BONDED SEMICONDUCTORS CONTAINING ORDERED VACANT SITES [J].
FINKMAN, E ;
TAUC, J ;
KERSHAW, R ;
WOLD, A .
PHYSICAL REVIEW B, 1975, 11 (10) :3785-3794
[8]   LATTICE-VIBRATIONS OF SEMICONDUCTORS WITH A DEFECT ZINCBLENDE STRUCTURE [J].
FINKMAN, E ;
TAUC, J .
PHYSICAL REVIEW LETTERS, 1973, 31 (14) :890-893
[9]   DONOR DIFFUSION DYNAMICS IN SILICON [J].
GHOSHTAGORE, RN .
PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :397-+
[10]   EXPERIMENTAL-CONDITION DEPENDENCE OF PHOSPHORUS DIFFUSIVITY IN SILICON [J].
GHOSTAGORE, RN .
PHYSICAL REVIEW LETTERS, 1970, 25 (13) :856-+