共 64 条
- [1] ABROKOSOV NK, 1962, RUSS J INORG CHEM, V7, P429
- [2] THE DIFFUSIVITY OF ARSENIC IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1065 - 1067
- [3] VACANCY ENHANCED DIFFUSION IN SILICON - EFFECTS OF IRRADIATION AND OF CHEMICAL IMPURITIES [J]. DISCUSSIONS OF THE FARADAY SOCIETY, 1961, (31): : 76 - &
- [4] NEW METHOD FOR TREATING LATTICE POINT DEFECTS IN COVALENT CRYSTALS [J]. PHYSICAL REVIEW, 1965, 137 (5A): : 1497 - +
- [5] BHOLA SR, 1963, RCA REV, V24, P511
- [6] BOLTAKS BI, 1969, FIZ TVERD TELA+, V10, P2186
- [7] BOLTAKS BI, 1969, FIZ TVERD TELA+, V11, P330
- [8] BOLTAKS BI, 1963, DIFFUSION SEMICONDUC, P102
- [10] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &