ELECTRON-CAPTURE CROSS-SECTION AND ENERGY-LEVEL OF GOLD ACCEPTOR CENTER IN SILICON

被引：76

作者：

BROTHERTON, SD

BICKNELL, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 02期

关键词：

D O I：

10.1063/1.324641

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：667 / 671

页数：5

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