GOLD AS AN OPTIMAL RECOMBINATION CENTER FOR POWER RECTIFIERS AND THYRISTORS

被引：10

作者：

DUDECK, I ^{[1
]}

KASSING, R ^{[1
]}

机构：

[1] UNIV MUNSTER,INST ANGEW PHYS,D-4400 MUNSTER,FED REP GER

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 12期

关键词：

D O I：

10.1016/0038-1101(77)90218-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1033 / 1036

页数：4

相关论文

共 11 条

[1] BALIGA BJ, 1977, SOLID STATE ELECTRON, V20, P225, DOI 10.1016/0038-1101(77)90188-5
[2] THERMAL AND OPTICAL GENERATION CURRENT IN REVERSE-BIASED GOLD-DOPED SILICON P+N JUNCTIONS WITHOUT DEPLETION APPROXIMATION
BRAUN, S
GRIMMEISS, HG
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2789 - 2794
[3] DUDECK I, UNPUBLISHED
[4] DUDECK I, TO BE PUBLISHED
[5] TEMPERATURE-DEPENDENCE OF GOLD ACCEPTOR ENERGY-LEVEL IN SILICON
ENGSTROM, O
GRIMMEISS, HG
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (07) : 413 - 415
[6] GOLD AS A RECOMBINATION CENTRE IN SILICON
FAIRFIELD, JM
GOKHALE, BV
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 685 - +
[7] DETERMINATION OF TEMPERATURE INDEPENDENCE OF CAPTURE CROSS-SECTION OF GOLD ACCEPTOR LEVEL FOR ELECTRONS IN N-TYPE SILICON
KASSING, R
KAHLER, E
DUDECK, I
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (01): : 141 - 146
[8] DOUBLE INJECTION IN INSULATORS
LAMPERT, MA
[J]. PHYSICAL REVIEW, 1962, 125 (01): : 126 - &
[9] DOUBLED INJECTION IN SEMICONDUCTORS HEAVILY DOPED WITH DEEP 2-LEVEL TRAPS
WEBER, WH
FORD, GW
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (10) : 1333 - &
[10] WOLF HF, 1969, SILICON SEMICONDUCTO, P31