DETERMINATION OF TEMPERATURE INDEPENDENCE OF CAPTURE CROSS-SECTION OF GOLD ACCEPTOR LEVEL FOR ELECTRONS IN N-TYPE SILICON

被引：14

作者：

KASSING, R ^{[1
]}

KAHLER, E ^{[1
]}

DUDECK, I ^{[1
]}

机构：

[1] UNIV MUNSTER,INST ANGEWANDTE PHYS,MUNSTER,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 30卷 / 01期

关键词：

D O I：

10.1002/pssa.2210300114

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：141 / 146

页数：6

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