DETERMINATION OF CAPTURE RATE CN OF GOLD ACCEPTOR LEVEL FROM SINGLE INJECTION N+-I-N+ SILICON SCLC DIODES

被引：14

作者：

KASSING, R ^{[1
]}

LENZ, H ^{[1
]}

机构：

[1] UNIV MUNSTER,INST ANGEW PHYS,MUNSTER,WEST GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 25卷 / 01期

关键词：

D O I：

10.1002/pssa.2210250110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：131 / 139

页数：9

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