THERMAL AND OPTICAL GENERATION CURRENT IN REVERSE-BIASED GOLD-DOPED SILICON P+N JUNCTIONS WITHOUT DEPLETION APPROXIMATION

被引：41

作者：

BRAUN, S ^{[1
]}

GRIMMEISS, HG ^{[1
]}

机构：

[1] LUND INST TECHNOL, DEPT SOLID STATE PHYS, LUND 7, SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 06期

关键词：

D O I：

10.1063/1.1662651

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2789 / 2794

页数：6

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