RELAXATION MODEL FOR OSCILLATIONS IN SEMICONDUCTORS WITH DOUBLE-CARRIER INJECTION

[1] ASHLEY KL, 1963, THESIS CARNEGIE I TE

[2] Blouke M. M., 1970, Solid-State Electronics, V13, P337, DOI 10.1016/0038-1101(70)90184-X

[3] RECOMBINATION OSCILLATIONS IN SEMICONDUCTORS WITH DOUBLE-CARRIER INJECTION [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 906 - &

[4] BROUSSEAU M, TO BE PUBLISHED

[5] PROPERTIES OF GOLD-DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173

[6] GOLD AS A RECOMBINATION CENTRE IN SILICON [J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 685 - +

[7] OSCILLATIONS IN SEMICONDUCTORS DUE TO DEEP LEVELS [J]. APPLIED PHYSICS LETTERS, 1963, 2 (04) : 71 - 73

[8] KONSTANTINOV OV, 1965, FIZ TVERD TELA+, V6, P2691

[9] KONSTANTINOV OV, 1967, SOV PHYS-SOLID STATE, V9, P1381

[10] DOUBLE INJECTION IN INSULATORS [J]. PHYSICAL REVIEW, 1962, 125 (01): : 126 - &

[1] ASHLEY KL, 1963, THESIS CARNEGIE I TE

[2] Blouke M. M., 1970, Solid-State Electronics, V13, P337, DOI 10.1016/0038-1101(70)90184-X

[3] RECOMBINATION OSCILLATIONS IN SEMICONDUCTORS WITH DOUBLE-CARRIER INJECTION [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 906 - &

[4] BROUSSEAU M, TO BE PUBLISHED

[5] PROPERTIES OF GOLD-DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173

[6] GOLD AS A RECOMBINATION CENTRE IN SILICON [J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 685 - +

[7] OSCILLATIONS IN SEMICONDUCTORS DUE TO DEEP LEVELS [J]. APPLIED PHYSICS LETTERS, 1963, 2 (04) : 71 - 73

[8] KONSTANTINOV OV, 1965, FIZ TVERD TELA+, V6, P2691

[9] KONSTANTINOV OV, 1967, SOV PHYS-SOLID STATE, V9, P1381

[10] DOUBLE INJECTION IN INSULATORS [J]. PHYSICAL REVIEW, 1962, 125 (01): : 126 - &