DOUBLED INJECTION IN SEMICONDUCTORS HEAVILY DOPED WITH DEEP 2-LEVEL TRAPS

被引：36

作者：

WEBER, WH

FORD, GW

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 10期

关键词：

D O I：

10.1016/0038-1101(70)90167-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1333 / &

共 27 条

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