NEW METHOD FOR COMPLETE ELECTRICAL CHARACTERIZATION OF RECOMBINATION PROPERTIES OF TRAPS IN SEMICONDUCTORS

被引：17

作者：

WANG, AC

SAH, CT

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 10期

关键词：

D O I：

10.1063/1.335501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4645 / 4656

页数：12

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