THE WIDTH OF THE NON-STEADY STATE TRANSITION REGION IN DEEP LEVEL IMPURITY MEASUREMENTS

被引：31

作者：

BROTHERTON, SD

机构：

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 10期

关键词：

D O I：

10.1016/0038-1101(83)90073-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：987 / 990

页数：4

相关论文

共 8 条

[1] ELECTRON-CAPTURE CROSS-SECTION AND ENERGY-LEVEL OF GOLD ACCEPTOR CENTER IN SILICON
BROTHERTON, SD
BICKNELL, J
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) : 667 - 671
[2] ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON
BROTHERTON, SD
BRADLEY, P
BICKNELL, J
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3396 - 3403
[3] CAPTURE FROM FREE-CARRIER TAILS IN THE DEPLETION REGION OF JUNCTION BARRIERS
GRIMMEISS, HG
LEDEBO, LA
MEIJER, E
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 307 - 308
[4] TRANSIENT DISTORTION AND DLTS
NORAS, JM
[J]. SOLID STATE COMMUNICATIONS, 1981, 39 (11) : 1225 - 1227
[5] DETERMINATION OF THE FREE-ENERGY LEVEL OF DEEP CENTERS, WITH APPLICATION TO GAAS
PONS, D
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 413 - 415
[6] LOW-TEMPERATURE HIGH-FREQUENCY CAPACITANCE MEASUREMENTS OF DEEP- AND SHALLOW-LEVEL IMPURITY CENTER CONCENTRATIONS
SAH, CT
ROSIER, LL
FORBES, L
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 161 - +
[7] JUNCTION STRUCTURE EFFECTS ON CONSTANT CAPACITANCE DLTS AND ODLTS SPECTRA
WHIGHT, KR
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (09) : 893 - 901
[8] TRAP DEPTH AND ELECTRON-CAPTURE CROSS-SECTION DETERMINATION BY TRAP REFILLING EXPERIMENTS IN SCHOTTKY DIODES
ZYLBERSZTEJN, A
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 200 - 202