TRANSIENT DISTORTION AND DLTS

被引：13

作者：

NORAS, JM

机构：

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 39卷 / 11期

关键词：

D O I：

10.1016/0038-1098(81)91119-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1225 / 1227

页数：3

共 8 条

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ALIPANAHI, S .

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[3] CORRELATION METHOD FOR SEMICONDUCTOR TRANSIENT SIGNAL MEASUREMENTS [J].

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[4] STUDY OF MAIN ELECTRON TRAP IN GA1-XINXAS ALLOYS [J].

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HALLAIS, J .

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[5]

MIRCEA A, 1979, I PHYS C SER, V46, P82

[6] CAPTURE, EMISSION AND RECOMBINATION AT A DEEP LEVEL VIA AN EXCITED-STATE [J].

REES, GJ ;

GRIMMEISS, HG ;

JANZEN, E ;

SKARSTAM, B .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (33) :6157-6165

[7]

Rhoderick E H, 1980, METAL SEMICONDUCTOR

[8] EFFECT OF NON-EXPONENTIAL TRANSIENTS ON THE DETERMINATION OF DEEP-TRAP ACTIVATION-ENERGIES BY DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].

WHITE, AM ;

DAY, B ;

GRANT, AJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (22) :4833-4838

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