CAPTURE, EMISSION AND RECOMBINATION AT A DEEP LEVEL VIA AN EXCITED-STATE

被引：27

作者：

REES, GJ ^{[1
]}

GRIMMEISS, HG ^{[1
]}

JANZEN, E ^{[1
]}

SKARSTAM, B ^{[1
]}

机构：

[1] UNIV LUND,DEPT SOLID STATE PHYS,S-22007 LUND 7,SWEDEN

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 33期

关键词：

D O I：

10.1088/0022-3719/13/33/013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：6157 / 6165

页数：9

共 16 条

[1]

ABAKUMOV VN, 1978, SOV PHYS SEMICOND+, V12, P1

[2]

AGGARWAL RL, 1965, PHYS REV, V140, P1246

[3] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J].

BARBER, HD .

SOLID-STATE ELECTRONICS, 1967, 10 (11) :1039-&

[4] ELECTRON-CAPTURE (INTERNAL) LUMINESCENCE FROM OXYGEN DONOR IN GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

HENRY, CH .

PHYSICAL REVIEW, 1968, 176 (03) :928-&

[5] 2 STAGE MODEL FOR DEEP LEVEL CAPTURE [J].

GIBB, RM ;

REES, GJ ;

THOMAS, BW ;

WILSON, BLH ;

HAMILTON, B ;

WIGHT, DR ;

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1977, 36 (04) :1021-1034

[6] DEEP LEVEL IMPURITIES IN SEMICONDUCTORS [J].

GRIMMEISS, HG .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :341-376

[7]

GRIMMEISS HG, UNPUBLISHED

[8]

GRIMMEISS HG, 1980, J APPL PHYS, V51

[9]

HAMILTON B, 1974, METAL SEMICONDUCTOR, P218

[10] EXCITATION-SPECTRA AND PIEZOSPECTROSCOPIC EFFECTS OF MAGNESIUM DONORS IN SILICON [J].

HO, LT ;

RAMDAS, AK .

PHYSICAL REVIEW B, 1972, 5 (02) :462-&

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