EXCITATION-SPECTRA AND PIEZOSPECTROSCOPIC EFFECTS OF MAGNESIUM DONORS IN SILICON

被引：88

作者：

HO, LT

RAMDAS, AK

机构：

来源：

PHYSICAL REVIEW B | 1972年 / 5卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.5.462

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：462 / &

共 53 条

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[4] EFFECT OF UNIAXIAL STRESS ON EXICTATION SPECTRA OF DONORS IN SILICON
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[7] EXCITATION SPECTRUM OF SINGLY IONIZED ZINC IN GERMANIUM WITH AND WITHOUT UNIAXIAL STRESS
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[J]. PHYSICS LETTERS A, 1968, A 27 (10) : 711 - &
[8] BAXTER JH, UNPUBLISHED
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[10] INFLUENCE OF HYDROSTATIC PRESSURE AND TEMPERATURE ON DEEP DONOR LEVELS OF SULFUR IN SILICON
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