INFLUENCE OF HYDROSTATIC PRESSURE AND TEMPERATURE ON DEEP DONOR LEVELS OF SULFUR IN SILICON

被引：38

作者：

CAMPHAUSEN, DL

JAMES, HM

SLADEK, RJ

机构：

来源：

PHYSICAL REVIEW B-SOLID STATE | 1970年 / 2卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.2.1899

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1899 / +

页数：1

共 50 条

[1] THEORY OF MOBILITY OF ELECTRONS IN SOLIDS
BLATT, FJ
[J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 4 : 199 - 363
[2] Theory of Brilloum zones and symmetry properties of wave functions in crystals
Bouckaert, LP
Smoluchowski, R
Wigner, E
[J]. PHYSICAL REVIEW, 1936, 50 (01): : 58 - 67
[3] BROOKS H, 1951, PHYS REV, V83, P879
[4] BROOKS H, 1955, ADV ELECTRON, V7, P118
[5] CAMPHAUSEN DL, 1969, THESIS PURDUE U
[6] SULFUR IN SILICON
CARLSON, RO
HALL, RN
PELL, EM
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 81 - 83
[7] THE STATISTICS OF DIVALENT IMPURITY CENTRES IN A SEMICONDUCTOR
CHAMPNESS, CH
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (12): : 1335 - 1339
[8] TEMPERATURE DEPENDENCE OF ENERGY LEVELS OF SHALLOW DONOR IMPURITIES IN SILICON
CHEUNG, CY
BARRIE, R
[J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (04) : 1421 - &
[9] COMINGS EW, 1956, HIGH PRESS TECHNOL, P160
[10] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS
CONWELL, E
WEISSKOPF, VF
[J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390