TEMPERATURE DEPENDENCE OF ENERGY LEVELS OF SHALLOW DONOR IMPURITIES IN SILICON

被引：10

作者：

CHEUNG, CY

BARRIE, R

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1967年 / 45卷 / 04期

关键词：

D O I：

10.1139/p67-107

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1421 / &

共 13 条

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