INFLUENCE OF HYDROSTATIC PRESSURE AND TEMPERATURE ON DEEP DONOR LEVELS OF SULFUR IN SILICON

被引：38

作者：

CAMPHAUSEN, DL

JAMES, HM

SLADEK, RJ

机构：

来源：

PHYSICAL REVIEW B-SOLID STATE | 1970年 / 2卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.2.1899

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1899 / +

页数：1

共 50 条

[21] HERRING C, UNPUBLISHED
[22] IMPURITY STATES ASSOCIATED WITH SUBSIDIARY ENERGY-BAND MINIMA
KAPLAN, H
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (12) : 1593 - &
[23] THEORY OF DONOR STATES IN SILICON
KOHN, W
LUTTINGER, JM
[J]. PHYSICAL REVIEW, 1955, 98 (04): : 915 - 922
[24] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM
KOHN, W
[J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 : 257 - 320
[25] SPACE GROUPS AND THEIR REPRESENTATIONS
KOSTER, GF
[J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 : 173 - 256
[26] KOSTER GF, 1957, SOLID STATE PHYS, V5, P231
[27] INFRARED ABSORPTION SPECTRUM OF SULFUR-DOPED SILICON
KRAG, WE
ZEIGER, HJ
[J]. PHYSICAL REVIEW LETTERS, 1962, 8 (12) : 485 - &
[28] KRAG WE, 1966, J PHYS SOC JPN, VS 21, P230
[29] KRAG WE, PRIVATE COMMUNICATIO
[30] KRAVITA LC, 1963, HP9 HARV U TECHN REP