DETERMINATION OF THE FREE-ENERGY LEVEL OF DEEP CENTERS, WITH APPLICATION TO GAAS

被引:54
作者
PONS, D [1 ]
机构
[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
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D O I
10.1063/1.91926
中图分类号
O59 [应用物理学];
学科分类号
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页码:413 / 415
页数:3
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共 15 条
  • [1] SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION
    BLEICHER, M
    LANGE, E
    [J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 375 - 380
  • [2] ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON
    BROTHERTON, SD
    BRADLEY, P
    BICKNELL, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3396 - 3403
  • [3] GRIMMEISS HG, 1979, 2ND LUND INT C DEEP
  • [4] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP
    HENRY, CH
    LANG, DV
    [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016
  • [5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
    LANG, DV
    [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
  • [6] LANG DV, 1975, LATTICE DEFECTS SEMI, V23, P581
  • [7] DEEP-LEVEL TRAPS AND CONDUCTION-BAND STRUCTURE OF INP
    MAJERFELD, A
    WADA, O
    CHOUDHURY, ANMM
    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (11) : 957 - 959
  • [8] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS
    MARTIN, GM
    MITONNEAU, A
    MIRCEA, A
    [J]. ELECTRONICS LETTERS, 1977, 13 (07) : 191 - 193
  • [9] MIRCEA A, 1977, J PHYS LETT-PARIS, V38, pL41, DOI 10.1051/jphyslet:0197700380104100
  • [10] ELECTRON AND HOLE CAPTURE CROSS-SECTIONS AT DEEP CENTERS IN GALLIUM-ARSENIDE
    MITONNEAU, A
    MIRCEA, A
    MARTIN, GM
    PONS, D
    [J]. REVUE DE PHYSIQUE APPLIQUEE, 1979, 14 (10): : 853 - 861