THE ELECTRICAL-PROPERTIES OF SULFUR IN SILICON

被引：59

作者：

BROTHERTON, SD

KING, MJ

PARKER, GJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 07期

关键词：

D O I：

10.1063/1.329346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4649 / 4658

页数：10

共 29 条

[1] HIGH INFRARED RESPONSIVITY INDIUM-DOPED SILICON DETECTOR MATERIAL COMPENSATED BY NEUTRON TRANSMUTATION [J].

BRAGGINS, TT ;

HOBGOOD, HM ;

SWARTZ, JC ;

THOMAS, RN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :2-10

[2]

BRAGGINS TT, 1980, IEEE T ED, V27, P1

[3] ENERGY-LEVEL OF THALLIUM IN SILICON [J].

BROTHERTON, SD ;

GILL, A .

APPLIED PHYSICS LETTERS, 1978, 33 (11) :953-955

[4] ELECTRON-CAPTURE CROSS-SECTION AND ENERGY-LEVEL OF GOLD ACCEPTOR CENTER IN SILICON [J].

BROTHERTON, SD ;

BICKNELL, J .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) :667-671

[5]

BROTHERTON SD, 1978, APPL PHYS LETT, V33, P11

[6]

BROTHERTON SD, 1979, J APPL PHYS, V50, P3996

[7] INFLUENCE OF HYDROSTATIC PRESSURE AND TEMPERATURE ON DEEP DONOR LEVELS OF SULFUR IN SILICON [J].

CAMPHAUSEN, DL ;

JAMES, HM ;

SLADEK, RJ .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06) :1899-+

[8] SULFUR IN SILICON [J].

CARLSON, RO ;

HALL, RN ;

PELL, EM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :81-83

[9] OPTICAL-PROPERTIES OF SULFUR-DOPED SILICON [J].

ENGSTROM, O ;

GRIMMEISS, HG .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :4090-4097

[10] THERMODYNAMICAL ANALYSIS OF OPTIMAL RECOMBINATION CENTERS IN THYRISTORS [J].

ENGSTROM, O ;

ALM, A .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1571-1576

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