HIGH INFRARED RESPONSIVITY INDIUM-DOPED SILICON DETECTOR MATERIAL COMPENSATED BY NEUTRON TRANSMUTATION

被引：15

作者：

BRAGGINS, TT

HOBGOOD, HM

SWARTZ, JC

THOMAS, RN

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 01期

关键词：

D O I：

10.1109/T-ED.1980.19810

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2 / 10

页数：9

共 10 条

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[5]

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[10] COMPENSATION OF RESIDUAL BORON IMPURITIES IN EXTRINSIC INDIUM-DOPED SILICON BY NEUTRON TRANSMUTATION OF SILICON [J].

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TAKEI, WJ .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2811-2820

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