EXTRINSIC IR PHOTOCONDUCTIVITY OF SI DOPED WITH B, AL, GA, P, AS, OR SB

被引：28

作者：

SOREF, RA

机构：

来源：

关键词：

D O I：

10.1063/1.1709302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5201 / +

页数：1

共 27 条

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[2] BRECKENRIDGE RG, 1956, PHOTOCONDUCTIVITY ED, P353
[3] ABSORPTION SPECTRA OF IMPURITIES IN SILICON .1. GROUP-III ACCEPTORS
BURSTEIN, E
PICUS, G
HENVIS, B
WALLIS, R
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 65 - 74
[4] INFRARED PHOTOCONDUCTIVITY DUE TO NEUTRAL IMPURITIES IN SILICON
BURSTEIN, E
OBERLY, JJ
DAVISSON, JW
[J]. PHYSICAL REVIEW, 1953, 89 (01): : 331 - 332
[5] CLOSED CYCLE CRYOGENIC REFRIGERATORS AS INTEGRATED COLD SOURCES FOR INFRARED DETECTORS
DANIELS, A
DUPRE, FK
[J]. APPLIED OPTICS, 1966, 5 (09): : 1457 - &
[6] EMMONS RB, 1965, NONR484800 CONTR
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[9] GODIK EE, 1966, FIZ TVERD TELA, V8, P1545
[10] GODIK EE, 1965, FIZ TVERD TELA, V7, P3664