OPTICAL-PROPERTIES OF SULFUR-DOPED SILICON

被引：23

作者：

ENGSTROM, O ^{[1
]}

GRIMMEISS, HG ^{[1
]}

机构：

[1] LUND INST TECHNOL,DEPT SOLID STATE PHYS,S-22007 LUND 7,SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 09期

关键词：

D O I：

10.1063/1.323268

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4090 / 4097

页数：8

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[6] INFLUENCE OF HYDROSTATIC PRESSURE AND TEMPERATURE ON DEEP DONOR LEVELS OF SULFUR IN SILICON
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