ANOMALOUS MAJORITY-CARRIER PEAKS IN DEEP LEVEL TRANSIENT SPECTROSCOPY

被引:4
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BRIERLEY, SK
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10.1063/1.336856
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O59 [应用物理学];
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页码:168 / 172
页数:5
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共 10 条
[1]   SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].
BLAKEMORE, JS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181
[2]   RECOMBINATION VELOCITY EFFECTS ON CURRENT DIFFUSION AND IMREF IN SCHOTTKY BARRIERS [J].
CROWELL, CR ;
BEGUWALA, M .
SOLID-STATE ELECTRONICS, 1971, 14 (11) :1149-&
[3]   IDENTIFICATION OF OXYGEN-RELATED MIDGAP LEVEL IN GAAS [J].
LAGOWSKI, J ;
LIN, DG ;
AOYAMA, T ;
GATOS, HC .
APPLIED PHYSICS LETTERS, 1984, 44 (03) :336-338
[4]   STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J].
LANG, DV ;
LOGAN, RA .
JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) :1053-1066
[5]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[6]   INFLUENCE FROM FREE-CARRIER TAILS IN DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS) [J].
MEIJER, E ;
LEDEBO, LA ;
WANG, ZG .
SOLID STATE COMMUNICATIONS, 1983, 46 (03) :255-258
[7]   ELECTRON AND HOLE CAPTURE CROSS-SECTIONS AT DEEP CENTERS IN GALLIUM-ARSENIDE [J].
MITONNEAU, A ;
MIRCEA, A ;
MARTIN, GM ;
PONS, D .
REVUE DE PHYSIQUE APPLIQUEE, 1979, 14 (10) :853-861
[8]   HOLE TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J].
MITONNEAU, A ;
MARTIN, GM ;
MIRCEA, A .
ELECTRONICS LETTERS, 1977, 13 (22) :666-668
[9]   CONDUCTION MECHANISM IN SCHOTTKY DIODES [J].
RHODERICK, EH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (10) :1920-+
[10]  
RHODERICK EH, 1978, METAL SEMICONDUCTOR, P142