IDENTIFICATION OF OXYGEN-RELATED MIDGAP LEVEL IN GAAS

被引：111

作者：

LAGOWSKI, J

LIN, DG

AOYAMA, T

GATOS, HC

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 03期

关键词：

D O I：

10.1063/1.94751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：336 / 338

页数：3

共 15 条

[1] DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS
HUBER, AM
LINH, NT
VALLADON, M
DEBRUN, JL
MARTIN, GM
MITONNEAU, A
MIRCEA, A
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4022 - 4026
[2] JAROS M, 1980, ADV PHYS, V29, P409, DOI 10.1080/00018738000101396
[3] THE ROLE OF DEEP-LEVEL CENTERS AND COMPENSATION IN PRODUCING SEMI-INSULATING GAAS
JOHNSON, EJ
KAFALAS, JA
DAVIES, RW
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 204 - 207
[4] KAMINSKA M, 1981, I PHYS C SER, V63, P197
[5] STUDY OF 2 DIFFERENT DEEP LEVELS IN UNDOPED LEC SI-GAAS BY PHOTO-LUMINESCENCE SPECTROSCOPY
KIKUTA, T
TERASHIMA, K
ISHIDA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L409 - L411
[6] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS
LAGOWSKI, J
GATOS, HC
PARSEY, JM
WADA, K
KAMINSKA, M
WALUKIEWICZ, W
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 342 - 344
[7] LAGOWSKI J, 1983, I PHYS C SER, V65, P41
[8] COMPENSATION MECHANISMS IN GAAS
MARTIN, GM
FARGES, JP
JACOB, G
HALLAIS, JP
POIBLAUD, G
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2840 - 2852
[9] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS
MARTIN, GM
MITONNEAU, A
MIRCEA, A
[J]. ELECTRONICS LETTERS, 1977, 13 (07) : 191 - 193
[10] OXYGEN-RELATED GETTERING OF SILICON DURING GROWTH OF BULK GAAS BRIDGMAN CRYSTALS
MARTIN, GM
JACOB, G
HALLAIS, JP
GRAINGER, F
ROBERTS, JA
CLEGG, B
BLOOD, P
POIBLAUD, G
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (09): : 1841 - 1856

← 1 2 →