OXYGEN-RELATED GETTERING OF SILICON DURING GROWTH OF BULK GAAS BRIDGMAN CRYSTALS

被引：28

作者：

MARTIN, GM

JACOB, G

HALLAIS, JP

GRAINGER, F

ROBERTS, JA

CLEGG, B

BLOOD, P

POIBLAUD, G

机构：

[1] RTC,F-14001 CAEN,FRANCE

[2] PHILIPS RES LABS,REDHIL RH1 5RF,SURREY,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1982年 / 15卷 / 09期

关键词：

D O I：

10.1088/0022-3719/15/9/008

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1841 / 1856

页数：16

相关论文

共 42 条

[1] ON PREPARATION OF HIGH PURITY GALLIUM ARSENIDE
AINSLIE, NG
WOODS, JF
BLUM, SE
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) : 2391 - &
[2] IONIZATION ENERGY AND IMPURITY BAND CONDUCTION OF SHALLOW DONORS IN N-GALLIUM ARSENIDE
BASINSKI, J
OLIVIER, R
[J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (01) : 119 - &
[3] AN INTERMEDIATE DONOR LEVEL IN N-TYPE GALLIUM ARSENIDE
BASINSKI, J
[J]. CANADIAN JOURNAL OF PHYSICS, 1966, 44 (05) : 941 - &
[4] CONCENTRATIONS OF CARBON AND OXYGEN IN INDIUM-PHOSPHIDE AND GALLIUM-ARSENIDE CRYSTALS GROWN BY LEC TECHNIQUE
BLACKMORE, GW
CLEGG, JB
HISLOP, JS
MULLIN, JB
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 401 - 413
[5] ENERGY-LEVEL MODEL FOR HIGH-RESISTIVITY GALLIUM ARSENIDE
BLANC, J
WEISBERG, LR
[J]. NATURE, 1961, 192 (479) : 155 - &
[6] DEEP-LEVEL THERMAL SPECTROSCOPY AND DEEP-LEVEL OPTICAL SPECTROSCOPY - APPLICATION TO STUDY OF LATTICE-RELAXATION
BOIS, D
CHANTRE, A
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (03): : 631 - 646
[7] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE
BROZEL, MR
CLEGG, JB
NEWMAN, RC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) : 1331 - 1339
[8] VPE GAAS-MESFET STRUCTURE USING OXYGEN INJECTION DURING BUFFER LAYER GROWTH
BRUCH, H
PALM, L
PONSE, F
BALK, P
[J]. ELECTRONICS LETTERS, 1979, 15 (09) : 246 - 247
[9] CHANTRE A, 1979, THESIS U GRENOBLE
[10] CLEGG JB, 1974, PHILIPS TECH REV, V34, P344

← 1 2 3 4 5 →